Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2006-02-21
2006-02-21
Barreca, Nicole (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S311000, C430S313000, C430S314000, C430S316000, C438S296000, C438S424000, C438S427000, C438S692000
Reexamination Certificate
active
07001713
ABSTRACT:
A method of forming a partial reverse active mask. A mask pattern comprising a large active region pattern with an original dimension and a small active region pattern is provided. The large active region pattern and the small active region pattern are shrunk until the small active region pattern disappears. The large active region pattern enlarged to a dimension slightly smaller than the original dimension.
REFERENCES:
patent: 4256829 (1981-03-01), Daniel
patent: 4268951 (1981-05-01), Elliott et al.
patent: 5130213 (1992-07-01), Berger et al.
patent: 5208124 (1993-05-01), Sporon-Fiedler et al.
patent: 5346584 (1994-09-01), Nasr et al.
patent: 5498565 (1996-03-01), Gocho et al.
patent: 5801083 (1998-09-01), Yu et al.
patent: 5851899 (1998-12-01), Weigand
patent: 5880007 (1999-03-01), Varian et al.
patent: 5926723 (1999-07-01), Wang
patent: 5926733 (1999-07-01), Heo
patent: 5958795 (1999-09-01), Chen et al.
patent: 5969425 (1999-10-01), Chen et al.
patent: 6004863 (1999-12-01), Jang
patent: 6046106 (2000-04-01), Tran et al.
patent: 6057210 (2000-05-01), Yang et al.
patent: 6103592 (2000-08-01), Levy et al.
patent: 6169012 (2001-01-01), Chen et al.
patent: 6291111 (2001-09-01), Chen et al.
patent: 6448159 (2002-09-01), Chen et al.
patent: 6486040 (2002-11-01), Chen et al.
patent: 2002/0001919 (2002-01-01), Chen et al.
patent: 2002/0094493 (2002-07-01), Chen et al.
Merriam Webster's Collegiate Dictionary, 10thed, pp. 952 (1998).
Chen Coming
Lur Water
Wu Juan-Yuan
Barreca Nicole
Hogan & Hartson LLP
Kubida William J.
Meza Peter J.
United Microelectronics Corp.
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