Method of forming oxide layers by bias ECR plasma deposition

Details Method of forming oxide layers by bias ECR plasma deposition Method of forming oxide layers by bias ECR plasma deposition

1991-04-11

1992-06-23

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

427 47, 427 99, 4272553, 427228, 427238, 20419237, C23C 1434, H01L 2102

Patent

active

051240149

ABSTRACT:
A method of forming silicon dioxide layers by bias ECR is described. The layers are formed by reacting oxygen with TEOS or TMCTS. High-quality, void-free layerc can be formed over conductor patterns having high-aspect-ratio intermetallic spacings.

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patent: 4877641 (1989-10-01), Dory
patent: 4892753 (1990-01-01), Wang et al.
Dry Process Symposium, 1990, "Film Characteristics of APCVD Oxides Using Organic Silicon and Ozone", M. Matsuura, H. Kotani, and H. Abe, pp. 29-34.
Japanese J. Appl. Phys. Lett. 22, 1983, "Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance Plasma," Seitaro Matsuo and Mikiho Kiuchi, pp. L210-L212.
Journal Vac. Sci. Technol. B 4 (4), Jul./Aug. 1986, "SiO.sub.2 Planarization Technology with Biasing and Electron Cyclotron Resonance Plasma Deposition for Submicron Interconnections", K. Machida and H. Oikawa, pp. 818-821.

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