Method of forming oxide layer using atomic layer deposition...

Details Method of forming oxide layer using atomic layer deposition... Method of forming oxide layer using atomic layer deposition...

2006-12-19

2006-12-19

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S785000

Reexamination Certificate

active

07151039

ABSTRACT:
In a method of forming an oxide layer using an atomic layer deposition and a method of forming a capacitor of a semiconductor device using the same, a precursor including an amino functional group is introduced onto a substrate to chemisorb a portion of the precursor on the substrate. Then, the non-chemisorbed precursor is removed. Thereafter, an oxidant is introduced onto the substrate to chemically react the chemisorbed precursor with the oxidant to form an oxide layer on the substrate. A deposition rate is fast and an oxide layer having a good deposition characteristic may be obtained. Also, a thin oxide film having a good step coverage and a decreased pattern loading rate can be formed.

REFERENCES:
patent: 6348386 (2002-02-01), Gilmer
patent: 6391803 (2002-05-01), Kim et al.
patent: 6407435 (2002-06-01), Ma et al.
patent: 6420279 (2002-07-01), Ono et al.
patent: 6660660 (2003-12-01), Haukka et al.
patent: 6753618 (2004-06-01), Basceri et al.
patent: 2003/0232511 (2003-12-01), Metzner et al.
patent: 10-2001-0082118 (2001-08-01), None
patent: 10-2004-0016779 (2004-02-01), None
patent: 10-2004-0060443 (2004-07-01), None
Document entitled “Technology Backgrounder: Atomic Layer Deposition” from “IC Knowledge LLC” downloaded from http://www.icknowledge.com/misc—technology/Atomic%20Layer%20Deposition%20Briefing.pdf, 7 pages, 2004.
Lee et al., “Atomic Layer Deposition of Aluminum Thin films Using an Alternating Supply of Trimethylaluminum and a Hydrogen Plasma”, 2002, Electrochemical and Solid-State Letters, 5 (10), C91-C93.
Ohring, The Materials Science of Thin Films, 1992, Academic Press, Inc., , pp. 339-340.
Web article entitled “chemisorption and physisorption” retrieved on Oct. 13, 2005 from “http://www.iupac.org/reports/2001/colloid—2001/manual—of—s—and—t
ode16.html”, 2 pages.

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