Method of forming oxide layer in semiconductor device

Details Method of forming oxide layer in semiconductor device Method of forming oxide layer in semiconductor device

2006-04-18

2006-04-18

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S745000, C438S775000, C438S906000

Reexamination Certificate

active

07030036

ABSTRACT:
Provided is related to a method of forming an oxide layer of a semiconductor device. In the method, a first oxide layer is formed with a first thickness on a semiconductor substrate, that is comparted into first and second fields, and then a second oxide layer is formed on the first field with a second thickness, while preventing damages on the surface of the semiconductor substrate, after removing the first oxide layer on the first field. By the method, oxide layers different in thickness can be formed in separate field on the semiconductor substrate, without damages due to an etching process while enhancing the physical quality of the oxide layers.

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patent: 2002/0001968 (2002-01-01), Lee et al.
patent: 2003/0027433 (2003-02-01), Faur et al.
patent: 1020050003535 (2005-01-01), None

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