Method of forming oxide film

Details Method of forming oxide film Method of forming oxide film

1995-09-01

1997-05-06

Padgett, Marianne

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

4272553, 4272554, H05H 124, C23C 1600

Patent

active

056269242

ABSTRACT:
A method of forming an O.sub.3 -TEOS oxide film, including the steps of supplying a reactant gas into a plasma CVD apparatus in which a waver is stored and applying a plasma generating voltage to form a plasma silicon oxide film on the wafer; performing a hydrophobic process by stopping supply of the reactant gas into the plasma CVD apparatus and application of the plasma generating voltage, introducing TEOS gas into the plasma CVD apparatus to make an atmosphere of the TEOS gas in a process chamber of the plasma CVD apparatus, and allowing the plasma silicon oxide film on the wafer to react with the TEOS gas in the process chamber; and allowing O.sub.3 to react with TEOS gas to form an O.sub.3 -TEOS oxide film on the plasma silicon oxide film subjected to the hydrophobic process. According to this method, the substrate dependency of the O.sub.3 -TEOS oxide film can be improved without the need for any additional apparatus for hydrophobic treatment of the plasma silicon oxide film and an increase in number of process steps.

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patent: 5502006 (1996-03-01), Kasagi
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