Method of forming oxide dielectric layer on refractory metal sil

Details Method of forming oxide dielectric layer on refractory metal sil Method of forming oxide dielectric layer on refractory metal sil

1996-11-22

1999-02-16

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438656, 438657, H01L 2144

Patent

active

058720570

ABSTRACT:
The present invention provides a method of forming an oxide dielectric layer on a tungsten silicide gate structure in a furnace oxidation process by first depositing a thin layer of amorphous silicon on top of the refractory metal silicide gate structure such that the refractory metal silicide is not damaged by the oxidant during the furnace oxidation process. For a tungsten silicide gate structure, a thin layer of amorphous silicon between about 10 .ANG. and about 100 .ANG. thick can be suitably used for such purpose.

REFERENCES:
patent: 4935380 (1990-06-01), Okumura et al.
patent: 4974056 (1990-11-01), Brodsky et al.
patent: 5428244 (1995-06-01), Segawa et al.
patent: 5441914 (1995-08-01), Taft et al.
patent: 5472896 (1995-12-01), Chen et al.
patent: 5604157 (1997-02-01), Dai et al.

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