Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2011-06-28
2011-06-28
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S492000, C438S503000, C438S507000
Reexamination Certificate
active
07968434
ABSTRACT:
This invention provides a method of forming semiconductor films on dielectrics at temperatures below 400° C. Semiconductor films are required for thin film transistors (TFTs), on-chip sensors, on-chip micro-electromechanical systems (MEMS) and monolithic 3D-integrated circuits. For these applications, it is advantageous to form the semiconductor films below 400° C. because higher temperatures are likely to destroy any underlying devices and/or substrates. This invention successfully achieves low temperature growth of germanium films using diboran. First, diboran gas is supplied into a reaction chamber at a temperature below 400° C. The diboran decomposes itself at the given temperature and decomposed boron is attached to the surface of a dielectric, for e.g., SiO2, forming a nucleation site and/or a seed layer. Second, source gases for semiconductor film formation, for e.g., SiH4, GeH4, etc., are supplied into the chamber, thereby forming a semiconductor film.
REFERENCES:
patent: 5514879 (1996-05-01), Yamazaki
patent: 2002/0006689 (2002-01-01), Miyasaka
patent: 2010/0055880 (2010-03-01), Tillack et al.
Saraswat Krishna
Tada Munehiro
Au Bac H
NEC Corporation
Picardat Kevin M
Stanford University
Sughrue & Mion, PLLC
LandOfFree
Method of forming of a semiconductor film, method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming of a semiconductor film, method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming of a semiconductor film, method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2671558