Method of forming notched gate structure

Details Method of forming notched gate structure Method of forming notched gate structure

2007-03-06

2007-03-06

Pham, Thanhha S. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S197000

Reexamination Certificate

active

10986765

ABSTRACT:
A method of forming a notched gate structure comprising a semiconductor substrate having a first oxide layer formed thereon. A first conductive layer is formed on the semiconductor substrate. A portion of the first conductive layer and a portion of the first oxide layer are removed to form first gate structures. First spacers are formed on the sidewalls of the gate structure. A second oxide layer is formed on the semiconductor substrate. A second conductive layer is formed on the surface of the second oxide layer. The first gate structures and the second conductive layer formed thereon are then removed to form a second gate structure. Second spacers are formed on the sidewalls of the second gate structure to complete the notched gate structure process. The method of the present invention reduces the capacitance between the gate and the source/drain extension, and simplifies the process, thereby increasing the controllability of the process.

REFERENCES:
patent: 6461904 (2002-10-01), Jin et al.
patent: 2002/0110985 (2002-08-01), Tseng

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