Method of forming nonvolatile memory device

Details Method of forming nonvolatile memory device Method of forming nonvolatile memory device

2010-06-16

2011-11-15

Lee, Cheung (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S128000, C438S257000, C438S589000, C257SE21179, C257SE21532, C257SE21662

Reexamination Certificate

active

08058160

ABSTRACT:
A method of forming the gate patterns of a nonvolatile memory device comprises stacking a gate insulating layer and a first conductive layer over a semiconductor substrate; forming isolation hard mask patterns over the first conductive layer; etching the first conductive layer using the isolation hard mask patterns as etch barriers, thus exposing the gate insulating layer; etching the gate insulating layer using the isolation hard mask patterns as etch barriers, thus exposing the semiconductor substrate; after exposing the semiconductor substrate, forming a passivation layer on the sidewalls of the first conductive layers and on the sidewalls of the gate insulating layers; and etching the semiconductor substrate using the passivation layer and the isolation hard mask patterns as etch barriers, thus forming trenches in the semiconductor substrate.

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