Method of forming non-volatile memory device

Details Method of forming non-volatile memory device Method of forming non-volatile memory device

2007-05-16

2009-12-08

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S751000, C257SE21305, C257SE21429

Reexamination Certificate

active

07629245

ABSTRACT:
A method of fabricating a non-volatile memory device, wherein a gate insulating layer, a first conductive layer, a tunneling layer, a trap nitride layer, a blocking oxide layer, and a capping layer are sequentially formed over a semiconductor substrate of a peripheral region. A contact region of the capping layer is etched. A spacer is formed on sidewalls of the capping layer. A contact region of the blocking oxide layer is etched by using the spacer as a mask. The spacer is removed while etching a contact region of the trap nitride layer. A contact region of the tunneling layer is etched.

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