Method of forming nanowires with a narrow diameter distribution

Details Method of forming nanowires with a narrow diameter distribution Method of forming nanowires with a narrow diameter distribution

2005-06-21

2008-11-04

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S507000, C977S844000, C257SE21090, C257SE21131, C257SE21461

Reexamination Certificate

active

07446024

ABSTRACT:
The growth of nanowires with a narrow diameter distribution is provided. The growth comprises: providing a substrate; providing a plurality of nanoparticles having a distribution of particle sizes on the substrate; initiating growth of nanowires by a vapor-liquid-solid technique; and terminating growth of the nanowires.

REFERENCES:
patent: 2004/0079278 (2004-04-01), Kamins et al.
patent: 2004/0082178 (2004-04-01), Kamins
patent: 2006/0057360 (2006-03-01), Samuelson et al.

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