Method of forming multilayer film

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region

Reexamination Certificate

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C438S584000, C438S674000, C438S694000, C438S699000, C438S761000, C438S508000, C148SDIG026, C216S040000

Reexamination Certificate

active

07375012

ABSTRACT:
This disclosure describes system(s) and/or method(s) enabling contacts for individual nanometer-scale-thickness layers of a multilayer film.

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