Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2008-05-20
2008-05-20
Pham, Thanh Van (Department: 2823)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S584000, C438S674000, C438S694000, C438S699000, C438S761000, C438S508000, C148SDIG026, C216S040000
Reexamination Certificate
active
07375012
ABSTRACT:
This disclosure describes system(s) and/or method(s) enabling contacts for individual nanometer-scale-thickness layers of a multilayer film.
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Kornilovich Pavel
Mardilovich Peter
Ramamoorthi Sriram
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