Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-12-30
1999-10-19
Tsai, Jey
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438131, H01L 2900
Patent
active
059703725
ABSTRACT:
Antifuses are provided which include first and second conductive layers and an antifuse layer positioned between the first and second conductive layers. The antifuse layer includes at least one oxide layer positioned between two amorphous silicon layers. Interconnect structures and programmable logic devices are also provided which include the antifuses.
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Hart Michael J.
Karpovich Yakov
Look Kevin T.
Harms Jeanette S.
Richardson Kent R.
Tsai Jey
Xilinx , Inc.
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