Method of forming monolithic CMOS-MEMS hybrid integrated,...

Details Method of forming monolithic CMOS-MEMS hybrid integrated,... Method of forming monolithic CMOS-MEMS hybrid integrated,...

2011-08-02

2011-08-02

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S050000, C438S053000

Reexamination Certificate

active

07989248

ABSTRACT:
A method of forming Monolithic CMOS-MEMS hybrid integrated, packaged structures includes the steps of providing: providing at least one semiconductor substrate having a CMOS device area including dielectric layers and metallization layers; applying at least one protective layer overlying the CMOS device area; forming at least one opening on the protective layer and patterning the dielectric and metallization layers to access the semiconductor substrate; forming at least one opening on the semiconductor substrate by etching the dielectric and metallization layers; applying at least one filler layer in the at least one opening on the semiconductor substrate; positioning at least one chip on the filler layer, the chip including a prefabricated front face and a bare backside; applying a first insulating layer covering the front face of the chip providing continuity from the semiconductor substrate to the chip; forming at least one via opening on the insulating layer covering the chip to access at least one contact area; applying at least one metallization layer overlying the insulating layer on the substrate and the chip connecting the metallization layer on the substrate to the at least one another contact area on the chip; applying a second insulating layer overlying the metallization layer on the at least one chip; applying at least one interfacial layer; applying at least one rigid substrate overlying the interfacial layer; and applying at least one secondary protective layer overlying the rigid substrate.

REFERENCES:
patent: 5717631 (1998-02-01), Carley et al.
patent: 6012336 (2000-01-01), Eaton et al.
patent: 6060336 (2000-05-01), Wan
patent: 6154366 (2000-11-01), Ma et al.
patent: 6400009 (2002-06-01), Bishop et al.
patent: 6403463 (2002-06-01), Suyama
patent: 6555906 (2003-04-01), Towle et al.
patent: 6759270 (2004-07-01), Infantolino et al.
patent: 7030432 (2006-04-01), Ma
patent: 7160752 (2007-01-01), Ouellet et al.
patent: 7435612 (2008-10-01), Xiao et al.
patent: 7736929 (2010-06-01), Monadgemi et al.
patent: 7863071 (2011-01-01), Ivanov et al.
patent: 7875484 (2011-01-01), Yeh et al.
patent: 2007/0164378 (2007-07-01), MacGugan
patent: 2007/0224832 (2007-09-01), Zurcher
patent: 2009/0317931 (2009-12-01), Perruchot et al.
patent: 1808405 (2007-07-01), None
patent: 2001-185635 (2001-07-01), None
patent: 10-2009-0031360 (2009-03-01), None
International Search Report; International Application No. PCT/US2010/040890; issued Feb. 10, 2011.
J. Smith et al.; “Embedded micromechanical devices for the monolithic integration of MEMS with CMOS”, Proc. IEDM '95, pp. 609-612, 1995.
W. Daum et al., “Overlay high density Interconnect: A chips-first multichip module technology”, IEEE Computer, vol. 26, No. 4, pp. 23-29, Apr. 1993.
J.T. Butler et al., “Advanced Multichip Module Packaging of Microelectromechanical Systems”, Tech Digest, Int. Conf. on Solid-State Sensors and Actuators, pp. 261-264, Chicago, IL, Jun. 16-19, 1997.
Analog Devices, Datasheet: “ADXL150/ADXL250 rev.0” Norwood, MA, 1996.
C. Hierold. Intelligent CMOS sensors. Proc. IEEE MEMS 2000, pp. 1-6, 2000.
P.F. van Kessel et al., A MEMS-based projection display. Proc. IEEE 86 (1998) pp. 1687-1704.

Affiliated with

Also associated with

Rating

Method of forming monolithic CMOS-MEMS hybrid integrated,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming monolithic CMOS-MEMS hybrid integrated,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming monolithic CMOS-MEMS hybrid integrated,... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2664128