Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-31
2005-05-31
Smith, Matthew (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S586000, C438S612000, C438S613000
Reexamination Certificate
active
06900126
ABSTRACT:
High density circuitry and metallic patterns are grown from polymer that has been patterned using a contact molding process. The patterned polymer is either intrinsically seedable or treated to make it seedable, e.g., it may be seeded with metallic seed ions, such as Pd ions. The patterned polymer is placed in an electroless deposition bath, with metal being plated onto its surface. Using these methods, metal (e.g, copper) may be deposited onto substrates of either organic or inorganic dielectric materials. The dielectric materials may comprise epoxy resins, ceramics, semiconductors (Si), glass, and silicon oxide.
REFERENCES:
patent: 3640789 (1972-02-01), Hepter
patent: 4006047 (1977-02-01), Brummett et al.
patent: 4100037 (1978-07-01), Baron et al.
patent: 4555414 (1985-11-01), Hoover et al.
patent: 4701351 (1987-10-01), Jackson
patent: 5084299 (1992-01-01), Hirsch et al.
patent: 5112434 (1992-05-01), Goldberg
patent: 5173442 (1992-12-01), Carey
patent: 5681441 (1997-10-01), Svendsen et al.
patent: 6165911 (2000-12-01), Calveley
patent: 6180239 (2001-01-01), Whitesides et al.
patent: 6207351 (2001-03-01), Cywar et al.
patent: 6309580 (2001-10-01), Chou
patent: 6326303 (2001-12-01), Robinson et al.
patent: 6402866 (2002-06-01), Casey et al.
patent: 6660192 (2003-12-01), Kim et al.
patent: 2001/0044225 (2001-11-01), Eldridge et al.
patent: 361185338 (1986-08-01), None
patent: 361185339 (1986-08-01), None
patent: 408134389 (1996-05-01), None
patent: 409194733 (1997-07-01), None
patent: 2000-129211 (2000-09-01), None
patent: 2001-131758 (2001-05-01), None
patent: WO 00/54107 (2000-09-01), None
L. T. Ramankiw, “Patterning by ‘Rubber Stamping’”, Research Disclosure Bulletin, No. 269, Sep. 1986.
Eldridge et al., “Method for forming microelectronic spring structures on a substrate”. United States Patent Application Publication, Nov. 22, 2001, U.S. Appl. No. 09/781,833.
Boone, “Process for producing three-dimensional, selectively metallized parts, and three-dimensional, selectively metallized part”. United States Patent Application Publication, Nov. 29, 2001, U.S. Appl. No. 09/835,335.
Voss, “Primer for metallizing substrate surfaces”, United States Patent Application Publication, Jan. 3, 2002, U.S. Appl. No. 09/757,810.
Carter Kenneth Raymond
Hart Mark Whitney
Hawker Craig Jon
Scott John Campbell
International Business Machines - Corporation
Johnson Daniel E.
Luu Chuong Anh
Smith Matthew
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