Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-01-30
2007-01-30
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S030000, C427S123000, C118S728000, C118S620000
Reexamination Certificate
active
10508067
ABSTRACT:
A method of forming a metallic wiring layer in a selected region of a layer-stacked plate, which includes the first process of introducing gas consisting of organometallic molecules into a reaction chamber having a layer-stacked plate arranged therein, and forming an adsorbed molecular layer composed of the organometallic molecules on the layer-stacked plate; the second process of reducing the concentration of the gas in the reaction chamber or exhausting the reaction chamber, after forming the adsorbed molecular layer; the third process of carrying a light irradiation against a selected region on the layer-stacked plate; the fourth process of removing the adsorbed molecular layer formed in the region other than the selected region, from the layer-stacked plate; and the fifth process of forming a metallic film in the selected region.
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patent: 2003/0054102 (2003-03-01), Horikawa
patent: 2003/0185980 (2003-10-01), Endo
patent: 2000-133652 (2000-12-01), None
Kabushiki Kaisha Ekisho Sentan Gijutsu Kaihatsu Center
Stoel Rives LLP
Wilczewski M.
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