Method of forming metallic oxide films using atomic layer...

Details Method of forming metallic oxide films using atomic layer... Method of forming metallic oxide films using atomic layer...

2007-06-22

2010-10-05

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S104000, C438S726000, C438S763000, C257SE21159, C257SE21170, C257SE21280

Reexamination Certificate

active

07807584

ABSTRACT:
Example embodiments are directed to methods of forming a metallic oxide film using Atomic Layer Deposition while controlling the power reflected by a reactor. The method may include feeding metallic source gases, for example, first and second metallic source gases, and/or a reactant gas including oxygen into the reactor individually. One of the metallic source gases may include an amino-group or an alkoxy-group and another metallic source gas may include neither an amino-group nor an alkoxy-group. A plasma may be produced in the reactor from the reactant gas.

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patent: 2007/0237699 (2007-10-01), Clark
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patent: 10-2001-0036268 (2001-05-01), None
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patent: 10-2006-0001123 (2006-06-01), None
Notice of Allowance dated Oct. 23, 2007 for corresponding Korean Patent Application No. 10-2006-0070341.

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