Method of forming metal wirings on a semiconductor substrate by

Details Method of forming metal wirings on a semiconductor substrate by Method of forming metal wirings on a semiconductor substrate by

1996-08-07

1998-09-01

Chapman, Mark

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 17, 216 77, 216 78, H01L 21306

Patent

active

058011013

ABSTRACT:
Disclosed herein is, a method of forming a metal wiring on a semiconductor substrate dry etching a metal wiring film or a laminated structure film comprising a metal wiring film and a metal barrier film, which includes a first step of performing etching to a metal wiring film and a second dry etching step of overetching the metal wiring film or the metal barrier film under such a condition that the residence time of a gas in an etching chamber in the second dry etching step is shorter than a residence time of a gas in the first etching step.

REFERENCES:
patent: 5318667 (1994-06-01), Kumihashi et al.
patent: 5368685 (1994-11-01), Kumihashi et al.
Chapman, Brian, "Flow Discharge Processes: Sputtering and Plasma Etching", pp. v, xi, 16 and 17.

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