Method of forming metal wiring of semiconductor device

Details Method of forming metal wiring of semiconductor device Method of forming metal wiring of semiconductor device

2007-07-10

2007-07-10

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S623000, C438S624000, C438S637000, C257SE21495

Reexamination Certificate

active

11024631

ABSTRACT:
A method for forming a metal wiring of a semiconductor device. The method includes forming an etch stop layer on a semiconductor substrate, forming a first inter metal dielectric on the etch stop layer, and forming a second inter metal dielectric on the first inter metal dielectric. The method also includes forming a first photoresist pattern defining a via hole on the second inter metal dielectric, forming a via hole exposing the etch stop layer using the first photo resist pattern, and forming a second photoresist pattern defining a trench by exposing and developing the first photoresist pattern. The method further includes forming a trench by etching the second inter metal dielectric using the second photoresist pattern as a mask, removing the etch stop layer exposed through the via hole, and forming a metal wiring by filling the via hole and the trench.

REFERENCES:
patent: 5877092 (1999-03-01), Lee et al.
patent: 6271117 (2001-08-01), Cherng
patent: 6287955 (2001-09-01), Wang et al.
patent: 6503829 (2003-01-01), Kim et al.
patent: 6709965 (2004-03-01), Chen et al.
patent: 6740599 (2004-05-01), Yamazaki et al.
patent: 2001/0029100 (2001-10-01), Huang et al.
patent: 2003/0054629 (2003-03-01), Kawai et al.
patent: 2003/0224595 (2003-12-01), Smith et al.
patent: 1998-0011853 (1998-04-01), None
patent: 2003-0094453 (2003-12-01), None

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