Method of forming metal wiring of nonvolatile memory device

Details Method of forming metal wiring of nonvolatile memory device Method of forming metal wiring of nonvolatile memory device

2011-06-21

2011-06-21

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S675000, C257SE21591

Reexamination Certificate

active

07964491

ABSTRACT:
A method of forming metal wirings of a nonvolatile memory device include forming a first insulating layer over a semiconductor substrate including a first junction area and a second junction area, forming first and second contact holes through which the first and second junction areas are respectively exposed in the first insulating layer, forming first and second contact plugs within the first and second contact holes, etching a part of the second contact plug, thus forming a recess, forming a second insulating layer to fill the recess, forming a third insulating layer over the semiconductor substrate including the first and second insulating layers, forming a first trench through which the first contact plug is exposed a second trench through which the second contact plug is exposed by etching the third insulating layer, and forming first and second metal wirings within the first and second trenches, respectively.

REFERENCES:
patent: 5717250 (1998-02-01), Schuele et al.
patent: 6284641 (2001-09-01), Parekh
patent: 6440842 (2002-08-01), Chang
patent: 6806187 (2004-10-01), Graettinger et al.
patent: 2002/0079581 (2002-06-01), Graettinger et al.
patent: 2005/0014328 (2005-01-01), Graettinger et al.
patent: 2006/0001161 (2006-01-01), Graettinger et al.
patent: 2007/0045703 (2007-03-01), Choi
patent: 2007/0114586 (2007-05-01), Graettinger et al.
patent: 1020040063350 (2004-07-01), None
patent: 1020040086702 (2004-10-01), None
patent: 1020030000737 (2005-09-01), None
patent: 1020060069030 (2006-06-01), None
patent: 1020090069936 (2009-07-01), None
Korean Office Action for application No. 10-2008-0075700, citing the attached reference(s).
Korean Notice of Allowance for 10-2008-0075700, citing the above reference(s).

Affiliated with

Also associated with

Rating

Method of forming metal wiring of nonvolatile memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming metal wiring of nonvolatile memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming metal wiring of nonvolatile memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2701998