Method of forming metal wiring line including using a first...

Details Method of forming metal wiring line including using a first... Method of forming metal wiring line including using a first...

2006-08-15

2006-08-15

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S634000, C438S645000, C438S692000

Reexamination Certificate

active

07091123

ABSTRACT:
In a method of forming a metal wiring line, a first insulating film is formed directly or indirectly on a semiconductor substrate. A second insulating film is formed on the first insulating film. A wiring line groove is formed to pass through the second insulating film to an inside of the first insulating film. A conductive film is formed to fill the wiring line groove and to cover the second insulating film. The conductive film and the second insulating film are removed by a first CMP polishing process, using the first insulating film as a stopper film, until the first insulating film is exposed.

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