Method of forming metal wiring layer of semiconductor device

Details Method of forming metal wiring layer of semiconductor device Method of forming metal wiring layer of semiconductor device

2006-09-13

2008-12-30

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S633000, C438S638000, C438S672000, C438S675000, C438S791000, C257SE21579, C257SE21649, C257SE21627, C257SE21641

Reexamination Certificate

active

07470612

ABSTRACT:
A method of forming a metal wiring layer of a semiconductor device produces metal wiring that is free of defects. The method includes forming an insulating layer pattern defining a recess on a substrate, forming a conformal first barrier metal layer on the insulating layer pattern, and forming a second barrier metal layer on the first barrier metal layer in such a way that the second barrier metal layer will facilitate the growing of metal from the bottom of the recess such that the metal can fill a bottom part of the recess completely and thus, form damascene wiring. An etch stop layer pattern is formed after the damascene wiring is formed so as to fill the portion of the recess which is not occupied by the damascene wiring.

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