Method of forming metal wiring in semiconductor device

Details Method of forming metal wiring in semiconductor device Method of forming metal wiring in semiconductor device

2011-05-31

2011-05-31

Andújar, Leonardo (Department: 2826)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S685000

Reexamination Certificate

active

07951713

ABSTRACT:
A method for forming a metal wiring of a semiconductor device capable of efficiently preventing a hillock phenomenon occurred in a subsequent annealing process of a metal wiring process. The method for forming a metal wiring of a semiconductor device includes forming an Al growth stop film on the upper interface of an Al wiring film by reacting implanted reactive ions with a Ti film or the Al in the Al wiring film.

REFERENCES:
patent: 6320243 (2001-11-01), Jeong et al.
patent: 2003/0155844 (2003-08-01), Anasako
patent: 1999-0065642 (1999-08-01), None
patent: 1020020028301 (2002-04-01), None

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