Method of forming metal lines in an integrated circuit having re

Details Method of forming metal lines in an integrated circuit having re Method of forming metal lines in an integrated circuit having re

1999-07-02

2000-10-10

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438636, 438643, 438648, 438653, 438656, 438658, 438660, 438669, 438671, 438722, 438785, H01L 214763

Patent

active

061301558

ABSTRACT:
A method of forming metal lines is disclosed. The method comprises the steps of: forming a composite metal layer over a wafer, the composite metal layer having a top layer of titanium/titanium nitride; oxidizing the top layer of titanium/titanium nitride to form a layer of titanium oxide; and patterning and etching the composite metal layer to form the metal lines.

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