Method of forming metal line of semiconductor device

Details Method of forming metal line of semiconductor device Method of forming metal line of semiconductor device

2007-12-28

2011-10-04

Dickey, Thomas L (Department: 2893)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21145

Reexamination Certificate

active

08030203

ABSTRACT:
A semiconductor device and a method of forming a metal line of a semiconductor device includes a first insulating layer formed over a semiconductor substrate an etch-stop layer formed over the first insulating layer, contact holes formed by etching the etch-stop layer and the first insulating layer, Contact plugs formed within the contact holes and a second insulating layer formed over the contact plugs and the etch-stop layer. The second insulating layer is etched in order to form trenches through which the contact plugs are exposed. Metal lines are formed within the trenches. Accordingly, since a hard mask with a high dielectric constant does not remain between the metal lines, the capacitance of the metal lines can be reduced.

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Official Action for Korean patent app. 2007-21769.
Korean Notice of Allowance for Korean application No. 10-2007-0027221.

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