Method of forming metal line of semiconductor device

Details Method of forming metal line of semiconductor device Method of forming metal line of semiconductor device

2008-06-27

2010-11-23

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S629000, C438S584000, C438S597000, C438S618000, C257S098000, C257S773000, C257S774000, C257SE21627, C257SE21641

Reexamination Certificate

active

07838421

ABSTRACT:
A method of forming metal lines of a semiconductor device, comprising providing a semiconductor substrate in which a plurality of gates and junctions formed between the gates are included in a cell area and a peripheral area; forming an insulating layer over the semiconductor substrate including the gates; forming an etch protection layer over the insulating layer; etching the etch protection layer and the insulating layer, and gap-filling conductive material to form contact plugs contacting the junctions of the cell area; and, forming first metal lines contacting the contact plugs and forming second metal lines contacting the junctions of the peripheral area by etching the etch protection layer and the insulating layer.

REFERENCES:
patent: 7291556 (2007-11-01), Choi et al.
patent: 2004/0127022 (2004-07-01), Juengling
patent: 2005/0250307 (2005-11-01), Park et al.
patent: 2006/0197230 (2006-09-01), Anezaki et al.
patent: 2006/0237851 (2006-10-01), Ko et al.
patent: 2006/0290659 (2006-12-01), Sakano et al.
patent: 10-2005-0123454 (2005-12-01), None
patent: 10-2007-0000598 (2007-01-01), None

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