Method of forming metal line of semiconductor device

Details Method of forming metal line of semiconductor device Method of forming metal line of semiconductor device

2006-11-07

2008-12-23

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S624000, C438S626000, C438S692000, C438S719000, C438S723000, C257SE21261, C257SE21275, C257SE21276, C257SE21396, C257SE21586

Reexamination Certificate

active

07468317

ABSTRACT:
A method of forming a metal line, in which a nitride layer is used instead of a metal barrier layer, enabling a metal line structure with a relatively low resistance and therefore realizing a high integration of a device. In the method of forming the metal line of the semiconductor device, a first insulating layer and a second insulating layer with a different etch selectivity are sequentially formed on a semiconductor substrate. Predetermined regions of the first insulating layer and the second insulating layer are sequentially etched to form a contact hole. A metal barrier layer is formed on the entire surface including the contact hole. A first metal material is deposited on the entire surface to gap-fill the contact hole. The first metal material on the second insulating layer is stripped such that the first metal material remains only within the contact hole, thus forming a contact plug. A metal line is formed on a predetermined region of the second insulating layer including the contact plug.

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