Method of forming metal line in semiconductor device

Details Method of forming metal line in semiconductor device Method of forming metal line in semiconductor device

2007-01-09

2007-01-09

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S656000, C438S685000

Reexamination Certificate

active

11159227

ABSTRACT:
A method of forming a line a semiconductor device, including the steps of forming an interlayer insulating film on a semiconductor substrate in which predetermined structures are formed, forming a trench through which a predetermined region of the semiconductor substrate is exposed in the interlayer insulating film, sequentially forming a glue layer and a first barrier metal film on the entire surface including the trench, forming a second barrier metal film at the bottom of the trench, and forming a line within the trench.

REFERENCES:
patent: 6562715 (2003-05-01), Chen et al.
patent: 6727592 (2004-04-01), Woo et al.
patent: 2002/0016063 (2002-02-01), Chen et al.
patent: 11-307474 (1999-11-01), None

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