Method of forming metal line in semiconductor device

Details Method of forming metal line in semiconductor device Method of forming metal line in semiconductor device

2006-03-28

2006-03-28

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S675000

Reexamination Certificate

active

07018921

ABSTRACT:
The present invention relates to a method of forming a metal line in a semiconductor device, in which an etch-stopping layer is deposited between the interlayer insulation films and then over-etching is performed by using the etch-stopping layer as an etching barrier during the etching process for forming the subsequent trenches. Therefore, it is possible to restrain occurrence of parasitic spacers in the trenches.

REFERENCES:
patent: 6133139 (2000-10-01), Dalal et al.
patent: 6143602 (2000-11-01), Jang
patent: 6303486 (2001-10-01), Park
patent: 6350672 (2002-02-01), Sun
patent: 6376366 (2002-04-01), Lin et al.
patent: 6387287 (2002-05-01), Hung et al.

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