Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-03
2006-10-03
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29128
Reexamination Certificate
active
07115959
ABSTRACT:
The present invention provides a gate stack structure that has high mobilites and low interfacial charges as well as semiconductor devices, i.e., metal oxide semiconductor field effect transistors (MOSFETs) that include the same. In the semiconductor devices, the gate stack structure of the present invention is located between the substrate and an overlaying gate conductor. The present invention also provides a method of fabricating the inventive gate stack structure in which a high temperature annealing process (on the order of about 800° C.) is employed. The high temperature anneal used in the present invention provides a gate stack structure that has an interface state density, as measured by charge pumping, of about 8×1010charges/cm2or less, a peak mobility of about 250 cm2/V-s or greater and substantially no mobility degradation at about 6.0×1012inversion charges/cm2or greater.
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patent: 2004/0188778 (2004-09-01), Aoyama
Ku, V. et al. “Low Tinv (≦1.8 nm) Metal-Gated MOSFETs on SiO2Based Gate Dielectrics for High Performance Logic Applications.”Int. Conf. SSDMvol. Tokyo, Japan p. 730-731 (2003).
Hiratani, Masahiko et al. “Effective Electron Mobility Reduced by Remote Charge Scattering in High-k Gate Stacks.”Jpn. J. Appl. Phys. vol. 41 p. 4521-4522 (2002).
Fischetti, Massimo et al. “Effective Electron Mobility in Si Inversion Layers in Metal-Oxide-Semiconductor Systems with a High-k Insulator: The Role of Remote Phonon Scattering.”J. Appl. Phys. vol. 90, No. 9 p. 4578-4601 (2001).
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Andreoni Wanda
Callegari Alessandro C.
Cartier Eduard A.
Curioni Alessandro
D'Emic Christopher P.
Baumeister B. William
Farahani Dana
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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