Method of forming metal electrode of system in package

Details Method of forming metal electrode of system in package Method of forming metal electrode of system in package

2008-06-17

2011-11-08

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S672000, C438S687000, C257S698000, C257S762000, C257SE21585

Reexamination Certificate

active

08053362

ABSTRACT:
A method for forming a metal electrode of a system in package of a system in package including a multilayer semiconductor device having semiconductor devices stacked in a plurality of layers. The method may include forming a through hole extending through the plurality of layers, forming a combustible material layer having high viscosity at a lower portion of the through hole in order to seal the lower portion thereof, and forming a through electrode by filling copper in the through hole. There is an effect of efficiently forming a through electrode having a large depth corresponding to the height of stacked semiconductor devices in the system in package. Filling copper in a through hole having a large depth-to-width ratio may be efficiently done by OSP coating, electrolysis copper plating, and electro Cu plating processes.

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