Method of forming metal contact holes in semiconductor fabricati

Details Method of forming metal contact holes in semiconductor fabricati Method of forming metal contact holes in semiconductor fabricati

1996-06-12

1997-09-30

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566441, 1566511, 1566571, 437189, 437195, 437981, H01L 21768

Patent

active

056722419

ABSTRACT:
A method of forming metal contact holes during semiconductor fabrication. The method includes three major steps to form the metal contact holes; a wet isotropic etching process for forming a first recess portion, a dry isotropic etching process for extending the first recess portion into a second recess portion, and a dry anisotropic etching process for forming a third recess portion beneath the second recess portion. The second recess portion and the third recess portion in combination constitute the metal contact hole. The lateral extent of the second recess portion, which in part affects subsequent deposition of metal in the contact hole and thus the step coverage effect of the metal connection, can be controlled by limiting the time of the dry isotropic etching process.

REFERENCES:
patent: 4902377 (1990-02-01), Berglund et al.
patent: 5180689 (1993-01-01), Liu et al.
patent: 5219791 (1993-06-01), Freiberger
patent: 5552343 (1996-09-01), Hsu

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