Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-07-06
2008-12-09
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S676000, C257SE21508
Reexamination Certificate
active
07462556
ABSTRACT:
Techniques for manufacturing a bond pad structure are provide. A method includes providing a substrate. A metal pad and passivation layer are formed over the substrate. The passivation layer includes an opening to expose a portion of the metal pad. A first film is deposited at least over the exposed portion of the metal pad. A second film is deposited over the first film. A photoresist layer is deposited over the substrate, and a trench is formed in the photoresist layer directly over the portion of the metal pad. A first layer is electroplated in the trench over the second film, and a barrier layer is electroplated in trench over the first layer. A termination electrode, comprising tin, is electroplated in the trench over the barrier layer. The photoresist layer is removed. In addition, the method can include etching to remove the second film and first film beyond a predetermined area. The termination electrode is then reflowed. The barrier layer prevents formation of an intermetallic compound in proximity to the first layer by precluding diffusion of tin from the termination electrode to the first layer. In a specific embodiment, the first layer includes stress release copper underneath a barrier layer which includes nickel.
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Geyer Scott B.
Nikmanesh Seahvosh J
Semiconductor Manufacturing International (Shanghai) Corporation
Townsend and Townsend / and Crew LLP
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