Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-08-28
2007-08-28
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S685000, C438S648000, C257SE21295, C257SE23145, C257SE21590
Reexamination Certificate
active
10815560
ABSTRACT:
Methods and apparatus for preparing a low-resistivity tungsten film on a substrate are provided. Methods involve the formation of a tungsten nucleation layer on a substrate using pulsed nucleation layer (PNL) techniques and depositing a bulk tungsten layer thereon. Methods for forming the tungsten nucleation layer involve the use of a boron-containing species, a tungsten-containing precursor, and optionally, a silane. The methods described are particularly useful for applications where thin, low resistivity films are desired, such as interconnect applications.
REFERENCES:
patent: 4804560 (1989-02-01), Shioya et al.
patent: 5028565 (1991-07-01), Chang et al.
patent: 5227329 (1993-07-01), Kobayashi et al.
patent: 5250329 (1993-10-01), Miracky et al.
patent: 5326723 (1994-07-01), Petro et al.
patent: 5391394 (1995-02-01), Hansen
patent: 5661080 (1997-08-01), Hwang et al.
patent: 5726096 (1998-03-01), Jung
patent: 5795824 (1998-08-01), Hancock
patent: 5804249 (1998-09-01), Sukharev et al.
patent: 5817576 (1998-10-01), Tseng et al.
patent: 5956609 (1999-09-01), Lee et al.
patent: 6001729 (1999-12-01), Shinriki et al.
patent: 6017818 (2000-01-01), Lu
patent: 6066366 (2000-05-01), Berenbaum et al.
patent: 6099904 (2000-08-01), Mak et al.
patent: 6107200 (2000-08-01), Takagi et al.
patent: 6143082 (2000-11-01), McInerney et al.
patent: 6174812 (2001-01-01), Hsiung et al.
patent: 6245654 (2001-06-01), Shih et al.
patent: 6265312 (2001-07-01), Sidhwa et al.
patent: 6294468 (2001-09-01), Gould-Choquette et al.
patent: 6297152 (2001-10-01), Itoh et al.
patent: 6309966 (2001-10-01), Govindarajan et al.
patent: 6355558 (2002-03-01), Dixit et al.
patent: 6551929 (2003-04-01), Kori et al.
patent: 6566250 (2003-05-01), Tu et al.
patent: 6566262 (2003-05-01), Rissman et al.
patent: 6607976 (2003-08-01), Chen et al.
patent: 6635965 (2003-10-01), Lee et al.
patent: 6706625 (2004-03-01), Sudijono et al.
patent: 6740585 (2004-05-01), Yoon et al.
patent: 6844258 (2005-01-01), Fair et al.
patent: 6861356 (2005-03-01), Matsuse et al.
patent: 6962873 (2005-11-01), Park
patent: 2001/0008808 (2001-07-01), Gonzalez
patent: 2001/0014533 (2001-08-01), Sun
patent: 2001/0015494 (2001-08-01), Ahn
patent: 2001/0044041 (2001-11-01), Badding et al.
patent: 2002/0090796 (2002-07-01), Desai et al.
patent: 2002/0177316 (2002-11-01), Miller et al.
patent: 2003/0059980 (2003-03-01), Chen et al.
patent: 2003/0104126 (2003-06-01), Fang et al.
patent: 2003/0127043 (2003-07-01), Lu et al.
patent: 2004/0044127 (2004-03-01), Okubo et al.
patent: 2004/0206267 (2004-10-01), Sambasivan et al.
patent: WO01/27147 (2001-04-01), None
George et al., “Surface Chemistry for atomic Layer Growth”, J. Phys. Chem, 1996, vol. 100, No. 31, pp. 13121-13131.
Bell et al., “Batch Reactor Kinetic Studies of Tungsten LPCVD from Silane and Tungsten Hexafluoride”, J. Electrochem. Soc., Jan. 1996, vol. 143, No. 1, pp. 296-302.
Klaus et al., “Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction”, Thin Solid Films 360 (2000) 145-153.
Klaus et al., “Atomically Controlled Growth of Tungsten and Tungsten Nitride Using Sequential Surface Reactions,” Applied Surface Science, 162-163, (2000) 479-491.
Li et al., “Deposition of WNxCyThin Films by ALCVD™ Method for Diffusion Barriers in Metallization,” IITC Conference Report, 2002, 3 Pages.
Elam et al, “Nucleation and Growth During Tungsten Atomic Layer Deposition on SiO2Surfaces,” Thin Solid Films, 2001, 13 Pages.
Collins et al., “Pulsed Deposition of Ultra Thin Tungsten for Plugfill of High Aspect Ratio Contacts,” Presentation made at Semicon Korea 2003, Jan. 21, 2003, 9 pages.
Collins, et al., “Pulsed Deposition of Ultra Thin Tungsten for Plugfill of High Aspect Ratio Contacts,” Semiconductor Equipment and Materials International, Semicon Korea, Jan. 21, 2003, 3 pages.
Lee et al., Pulsed Deposition of Ultra Thin Tungsten and its Application for Plugfill of High Aspect Ratio Contacts, Abstract, Jan. 21, 2003, 1 page.
Lee et al., PCT Search Report, Completed Oct. 15, 2004, PCT/US2004/006940, Int'l filing date May 3, 2004.
Lee et al., Written Opinion, Completed Oct. 15, 2004, PCT/US2004/006940, Int'l filing date May 3, 2004.
U.S. Office Action mailed Jul. 17, 2002, from U.S. Appl. No. 09/975,074.
U.S. Office Action mailed Feb. 8, 2005, from U.S. Appl. No. 10/649,351.
U.S. Office Action mailed Jul. 14, 2005, from U.S. Appl. No. 10/649,351.
Presentation by Inventor James Fair: “Chemical Vapor Deposition of Refractory Metal Silicides,” 27 Pages, 1983.
Saito et al., “A Novel Copper Interconnection Technology Using Self Aligned Metal Capping Method,” IEEE, 3 Pages, 2001.
U.S. Office Action mailed Jun. 22, 2004, from U.S. Appl. No. 10/435,010.
U.S. Office Action mailed Mar. 23, 2005, from U.S. Appl. No. 10/690,492.
Levy e al., “Deposition of Tungsten Nitride”, Novellus Systems, Inc., filed Oct. 20, 2003, U.S. Appl. No. 10/690,492, pp. 1-42.
Lee et al., “Method for Reducing Tungsten Film Roughness and Improving Step Coverage”, Novellus Systems, Inc., filed Aug. 26, 2003, U.S. Appl. No. 10/649,351, pp. 1-40.
Fair et al., “Selective Refractory Metal and Nitride Capping”, Novellus Systems, Inc., filed Nov. 8, 2004, U.S. Appl. No. 10/984,126, pp. 1-22.
U.S. Office Action mailed Nov. 8, 2004, from U.S. Appl. No. 10/984,126.
Chan et al., “Methods for Growing Low-Resistivity Tungsten Film”, Novellus Systems, Inc., filed Nov. 1, 2005, U.S. Appl. No. 11/265,531, pp. 1-35.
Levy et al., “Deposition of Tungsten Nitride”, Novellus Systems, Inc., filed Dec. 16, 2005, U.S. Appl. No. 11/305,368, pp. 1-39.
U.S. Office Action mailed Dec. 28, 2005, from U.S. Appl. No. 10/649,351.
Wongsenakhum et al., “Reducing Silicon Attack and Improving Resistivity of Tungsten Nitride Film”, Novellus Systems, Inc., filed Feb. 6, 2006, Application No. Not yet assigned, pp. 1-26.
U.S. Office Action mailed May 17, 2006, from U.S. Appl. No. 10/984,126.
Ashtiani Kaihan A.
Chan Lana Hiului
Collins Joshua
Fellis Aaron R.
Gao Juwen
Beyer & Weaver, LLP
Estrada Michelle
Novellus Systems Inc.
LandOfFree
Method of forming low-resistivity tungsten interconnects does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming low-resistivity tungsten interconnects, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming low-resistivity tungsten interconnects will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3884017