Method of forming low-K interlevel dielectric layers and...

Coating processes – Heat decomposition of applied coating or base material

Reexamination Certificate

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Reexamination Certificate

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07459183

ABSTRACT:
A method of forming a structure. The method including: forming a precursor layer on a substarte, the precursor layer including a resin and, polymeric nano-particles dispersed in the resin, and a solvent, each the polymeric nano-particle comprising a multi-arm core polymer and pendent polymers attached to the milti-arm core polymer and pendent polymers attached to the multi-arm core polymer, the multi-arm core polymer immiscible with the resin and the pendent polymers miscuble with the resin; heating the precursor layer to cross-link at least about 90% of the resin thereby converting the pre-baked precursor layer to a dielectric layer; forming trenches in the dielectric layer and filling the trenches with an electrical conductor; heating the dielectric layer to thermally decompose at least acout 99.5% of the polymeric nano-particles into decomposition products and to drive the decomposition products out of the dielectric layer.

REFERENCES:
patent: 5895263 (1999-04-01), Carter et al.
patent: 6093636 (2000-07-01), Carter et al.
patent: 6333141 (2001-12-01), Carter et al.
patent: 6630520 (2003-10-01), Bruza et al.
patent: 6667147 (2003-12-01), Gallagher et al.
patent: 2003/0059723 (2003-03-01), Gallagher et al.
patent: 2003/0168251 (2003-09-01), Hawker et al.
patent: 2003/0186168 (2003-10-01), Gallagher et al.
patent: 2003/0186169 (2003-10-01), Gallagher et al.
patent: 2004/0053033 (2004-03-01), Niu et al.
patent: 2004/0137241 (2004-07-01), Lin et al.
patent: 2004/0137243 (2004-07-01), Gleason et al.
patent: 2004/0161922 (2004-08-01), Gallagher et al.
patent: 2004/0191417 (2004-09-01), Yontz et al.
patent: 2004/0213911 (2004-10-01), Misawa et al.
patent: 2005/0070124 (2005-03-01), Miller et al.
patent: 2006/0142504 (2006-06-01), Ree et al.
patent: 2002003683 (2002-01-01), None
Kim, et al.; Fabrication of Multilayed Nanaporous Poly(methyl silsesquioxane); Advanced Materials 2002; vol. 14, No. 22, Nov. 18; 0935-9648/02/2211; pp. 1637-1639.
Calvert, et al.; A New Approach to Ultralow-k Dielectrics; Semiconductor International; Nov. 2003; pp. 56-60.

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