Method of forming low- k dielectrics using a rapid curing...

Details Method of forming low- k dielectrics using a rapid curing... Method of forming low- k dielectrics using a rapid curing...

2004-03-10

2009-11-24

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S790000, C438S795000

Reexamination Certificate

active

07622399

ABSTRACT:
A method of forming a low dielectric constant structure. The method comprises providing at a first temperature a dielectric material having a first dielectric constant and a first elastic modulus, and curing the dielectric material by a thermal curing process, in which the material is heated to a second temperature by increasing the temperature at an average rate of at least 1° C. per second. As a result a densified, dielectric material is obtained which has a low dielectric constant.

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patent: 6518204 (2003-02-01), Yamakawa et al.
patent: 2001/0017402 (2001-08-01), Usami
patent: 2003/0092854 (2003-05-01), Yahagi et al.

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