Method of forming light emitting devices comprising...

Details Method of forming light emitting devices comprising... Method of forming light emitting devices comprising...

2011-08-30

2011-08-30

Cao, Phat X (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C257SE51040, C257SE33069, C977S750000

Reexamination Certificate

active

08008102

ABSTRACT:
The present invention relates to a new light emitters that exploit the use of semiconducting single walled carbon nanotubes (SWNTs). Experimental evidences are given on how it is possible, within the standard silicon technology, to devise light emitting diodes (LEDs) emitting in the infrared IR where light emission results from a radiative recombination of electron and holes on semiconducting single walled carbon nanotubes (SWNTs-LED). We will also show how it is possible to implement these SWNTs-LED in order to build up a laser source based on the emission properties of SWNTs. A description of the manufacturing process of such devices is also given.

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