Method of forming LDD of semiconductor devices

Details Method of forming LDD of semiconductor devices Method of forming LDD of semiconductor devices

2005-04-12

2005-04-12

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S365000, C438S491000, C438S514000, C438S552000

Reexamination Certificate

active

06878577

ABSTRACT:
A method of forming an LDD of a semiconductor device. A substrate having a polysilicon layer thereon is provided, wherein the polysilicon layer comprises a first region and a second region. A patterned photoresist layer is formed on the polysilicon layer for exposing the first region and covering the second region. The photoresist layer covering the second region comprises a middle portion and an edge portion, wherein the middle portion is thicker than the edge portion. Then, an ion implantation process is performed using the photoresist layer as a mask for forming a source/drain in the first region of the polysilicon layer and an LDD in the second region underneath the edge portion of the photoresist layer.

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