Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-23
2005-08-23
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S015000
Reexamination Certificate
active
06933566
ABSTRACT:
A method (and resultant structure) of forming a semiconductor structure, includes processing an oxide to have a crystalline arrangement, and depositing an amorphous semiconductor layer on the oxide by one of evaporation and chemical vapor deposition (CVD).
REFERENCES:
patent: 3986197 (1976-10-01), Ablassmeier
patent: 4891329 (1990-01-01), Reisman et al.
patent: 4980339 (1990-12-01), Setsune et al.
patent: 5248564 (1993-09-01), Ramesh
patent: 5478653 (1995-12-01), Guenzer
patent: 5847419 (1998-12-01), Imai et al.
patent: 6096434 (2000-08-01), Yano et al.
patent: 6248621 (2001-06-01), Wilk et al.
patent: 6258459 (2001-07-01), Noguchi et al.
patent: 6376337 (2002-04-01), Wang et al.
patent: 6610548 (2003-08-01), Ami et al.
“Crystalline Oxides on Silicon: The First Five Monolayers”, Rodney A. McKee et al., Physical Review Letters, vol. 81, No. 14, Oct. 5, 1998, pp. 3014-3017.
“Epitaxial Ceo2 on Silicon Substrates and the Potential of Si/ceo2/si for SOI Structures”, A.H. Morshed et al., Mat. Res. Soc. Symp. V474,339(1197).
J. Haeni, D.G. Schlom, Materials Research Society 2001 Meeting, Apr. 2001, San Francisco, “LaA103 Derivative Structures for Alternative Gate Dielectrics”.
Bojarczuk, Jr. Nestor Alexander
Copel Matthew Warren
Guha Supratik
Narayanan Vijay
Cao Phat X.
Chaung, Esq. Wan Yee
Doan Theresa T.
International Business Machines - Corporation
McGinn & Gibb PLLC
LandOfFree
Method of forming lattice-matched structure on silicon and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming lattice-matched structure on silicon and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming lattice-matched structure on silicon and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3523955