Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-02-08
2005-02-08
Cao, Phat X. (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S287000, C428S446000
Reexamination Certificate
active
06852575
ABSTRACT:
A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.
REFERENCES:
patent: 3986197 (1976-10-01), Ablassmeier
patent: 4891329 (1990-01-01), Reisman et al.
patent: 4980339 (1990-12-01), Setsune et al.
patent: 5248564 (1993-09-01), Ramesh
patent: 5478653 (1995-12-01), Guenzer
patent: 6096434 (2000-08-01), Yano et al.
patent: 6248621 (2001-06-01), Wilk et al.
patent: 6258459 (2001-07-01), Noguchi et al.
patent: 6376337 (2002-04-01), Wang et al.
patent: 6610548 (2003-08-01), Ami et al.
“Crystalline Oxides on Silicon: The First Five Monolayers”, Rodney A. McKee et al., Physical Review Letters, vol. 81, No. 14, Oct. 5, 1998, pp. 3014-3017.
“Epitaxial Ceo2 on Silicon Substrates and the Potential of Si/ceo2/si for SOI Structures”, A.H. Morshed et al. Mat. Res. Soc. Symp. V474,339(1197).
J. Haeni, D.G. Schlom, Materials Research Society 2001 meeting, Apr. 2001, San Francisco, “LaA103 Derivative Structures for Alternative Gate Dielectrics”.
Bojarczuk, Jr. Nestor Alexander
Buchanan Douglas Andrew
Guha Supratik
Narayanan Vijay
Ragnarsson Lars-Ake
Cao Phat X.
Cheung, Esq. Wan Yee
Doan Theresa T.
McGinn & Gibb PLLC
LandOfFree
Method of forming lattice-matched structure on silicon and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming lattice-matched structure on silicon and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming lattice-matched structure on silicon and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3459474