Method of forming isolation region

Details Method of forming isolation region Method of forming isolation region

1996-11-07

1999-08-10

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438444, 438448, 438439, H01L 2176

Patent

active

059373113

ABSTRACT:
A method of forming an isolation region exerts no adverse influence upon steps after forming the isolation region and is, besides, capable of forming the isolation region having a narrow isolation width. After a mask has been formed of an oxidationproof material such as Si.sub.3 N.sub.4 on a silicon substrate, a field oxide is formed by effecting selective oxidation in a high-pressure dry oxygen atmosphere. Thereafter, a portion, protruded from the silicon substrate, of the formed field oxide is removed, thereby forming the isolation region.

REFERENCES:
patent: 5298451 (1994-03-01), Rao
patent: 5608256 (1997-03-01), Rao
patent: 5652177 (1997-07-01), Pan
Mathews et al., Dry O.sub.2 High Pressure Field Oxidation for 0.25um Isolation Technology; 1995 International Conference on Solid State Devices and Materials, 1995, pp. 899-901.
S. Deleonibus et al., A High Pressure High Temperature Poly Buffer LOCOS (HP-HTPBL) Isolation Process for 1Gbit Density Non Volatile Memories; ICSSDM, 1995 pp. 893-985.
S. Deleonibus et al., Three Dimensional Improvement of Field Oxidation by Using High Pressure Oxidation for the Gigabit Density Field Isolation, ICSSDM, 1993 pp. 525-527.

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