Method of forming isolation layer of semiconductor device

Details Method of forming isolation layer of semiconductor device Method of forming isolation layer of semiconductor device

1997-04-16

1999-09-28

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438447, H01L 21762

Patent

active

059603011

ABSTRACT:
A method of forming an isolation layer of a semiconductor device including active regions on a substrate and device isolation regions for isolating the active regions from one another includes the steps of forming a nitride layer on the active region of a semiconductor substrate, forming trenches of a predetermined depth in the semiconductor substrate at peripheral portions of the device isolation regions, and filling the trenches with a nitride material and performing a field oxidation process.

REFERENCES:
patent: 5432118 (1995-07-01), Orlowski et al.

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