Method of forming isolation layer for semiconductor device

Details Method of forming isolation layer for semiconductor device Method of forming isolation layer for semiconductor device

1997-12-17

1999-06-15

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438439, 438297, 438298, H01L 2176

Patent

active

059131330

ABSTRACT:
An isolation layer forming method for a semiconductor device which prevents damage of an isolation layer due to a misalignment of a mask when a contact hole is formed. An anti-oxidative pattern for exposing an isolation region is formed on a semiconductor substrate, and an undercut portion on a lower sidewall of the anti-oxidative pattern is formed by selectively removing the exposed semiconductor substrate by an isotropic etching process. Thereafter, the isolation layer is formed by an oxidation process so that an edge portion of the isolation layer which is placed in the undercut portion is not exposed to a surface of the semiconductor substrate.

REFERENCES:
patent: 5173444 (1992-12-01), Kawamura
patent: 5358893 (1994-10-01), Yang et al.
patent: 5824594 (1998-10-01), Kim et al.
patent: 5837595 (1998-11-01), Ahn et al.

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