Method of forming interlayer film

Details Method of forming interlayer film Method of forming interlayer film

1997-07-18

1999-03-30

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438778, 438761, 438784, 438788, H01L 2144

Patent

active

058889094

ABSTRACT:
A method of forming an interlayer film on a substrate with a plurality of wiring patterns is provided. The interlayer film is deposited on the substrate in a multi step process. A portion of the interlayer film is first deposited in a layer having relatively reduced fluidity so that the film is formed with an almost uniform thickness regardless of any pattern width present on a substrate. Thereafter, a second portion or layer of the intelayer film is deposited in a layer having relatively increased fluidity so that the second layer material fills up any troughs formed between wiring patterns. In a preferred embodiment, an undercoating film may be formed in advance which is then rendered hydrophobic so that the first portion of the interlayer film deposited thereon has reduced fluidity such that the first portion is uniformly deposited regardless of any pattern width. Thereafter, a second portion of the interlayer film may be deposited over the first portion of the film under conditions which provide relatively increased fluidity.

REFERENCES:
patent: 5424253 (1995-06-01), Usami et al.
patent: 5665643 (1997-09-01), Shin
patent: 5683940 (1997-11-01), Yaahiro
patent: 5691247 (1997-11-01), Lavie et al.
patent: 5700720 (1997-12-01), Hashimoto
patent: 5703404 (1997-12-01), Matsuura

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