Method of forming inter-metal dielectric layer for WVIA process

Details Method of forming inter-metal dielectric layer for WVIA process Method of forming inter-metal dielectric layer for WVIA process

1998-06-24

1999-02-16

Dutton, Brian

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438782, 438624, 427387, H01L 2131, H01L 21469, H01L 214763, B05D 302

Patent

active

058720669

ABSTRACT:
A method of forming an inter-metal dielectric layer using hydrogen silsesquoxane (HSQ) as one of the dielectric layers. HSQ is a highly fluidic material that has a high gap-filling capacity. Therefore, the desired thickness and uniformity can be obtained in a single coating operation. Furthermore, when the HSQ layer is cured in an atmosphere of gaseous nitrogen, the HSQ layer is able to attain a high degree of planarity. Consequently, there is no need to planarize the dielectric layer before carrying out subsequent operations.

REFERENCES:
patent: 5320868 (1994-06-01), Ballance et al.
patent: 5530293 (1996-06-01), Cohen et al.
patent: 5607773 (1997-03-01), Ahlburn et al.
patent: 5665849 (1997-09-01), Cho
patent: 5750403 (1998-05-01), Inoue et al.

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