Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-12-05
2008-11-04
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S758000, C257SE21279
Reexamination Certificate
active
07446061
ABSTRACT:
A semiconductor substrate with a groove is placed in a plasma generating reaction chamber. Silicon, oxygen and hydrogen containing gases are introduced into the reaction chamber as process gases. A ratio of a gas flow of the hydrogen containing gas except the silicon containing gas to a total gas flow of the silicon containing gas and the oxygen containing gas defines a first gas-flow ratio. A ratio of a gas flow of the oxygen containing gas to that of the silicon containing gas defines a second gas-flow ratio. The first and second gas-flow ratios establish a linear function for a critical condition. A cluster formation condition is set up by relatively increasing the first gas-flow ratio while relatively decreasing the second gas-flow ratio with respect to the critical condition. A cluster suppression condition is also set up by relatively decreasing the first gas-flow ratio while relatively increasing the second gas-flow ratio with respect to the critical condition. The process gases are supplied to the reaction chamber under the cluster formation condition and under the cluster suppression condition, alternately, to form an insulating film buried in the groove.
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Matsuda Taketo
Nakata Rempei
Nishiyama Yukio
Sato Hiroshi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Ghyka Alexander G
Kabushiki Kaihsa Toshiba
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