Method of forming insulating film

Details Method of forming insulating film Method of forming insulating film

1995-01-09

1996-09-10

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437238, H01L 2131, H01L 21316

Patent

active

055545700

ABSTRACT:
The present invention relates to a film forming method of forming a silicon containing insulating film by plasma CVD. Objects of the present invention are to form, using a highly safe reaction gas, an insulating film which is dense, has excellent step coverage and is low in moisture and in organic residues such as carbon. The insulating film has good affinity for the silicon oxide film formed by the thermal CVD method. The invention also enables control of the refractive index and stress etc. of the insulating film formed. The mixed gas, including the organic compound having Si-H bonds and the oxidizing gas, is converted to a plasma and the silicon containing insulating film is formed on a deposition substrate from the plasma.

REFERENCES:
patent: 4708884 (1987-11-01), Chandross et al.
patent: 5051380 (1991-09-01), Maeda et al.
patent: 5120680 (1992-06-01), Foo et al.
patent: 5124014 (1992-06-01), Foo et al.
patent: 5378510 (1995-01-01), Thomas et al.
patent: 5403630 (1995-04-01), Matsui et al.
Process Technology, vol. 1, pp. 182-190, Wolf et al. Silicon Processing for the VLSI Era.

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