Method of forming inorganic alignment film, inorganic...

Details Method of forming inorganic alignment film, inorganic... Method of forming inorganic alignment film, inorganic...

2004-09-01

2011-11-29

McDonald, Rodney (Department: 1724)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S192230, C204S192260, C204S192340, C427S532000, C427S533000, C427S534000

Reexamination Certificate

active

08066853

ABSTRACT:
A method of forming an inorganic alignment film made substantially of an inorganic material on a base substrate is provided comprising a milling process of irradiating ion beams onto the surface of the base substrate, on which the inorganic alignment film is to be formed, from a direction inclined at a predetermined angle θbwith respect to a direction vertical to the surface, and a film-forming process of forming the inorganic alignment film on the base substrate onto which the ion beams are irradiated. In the milling process, the predetermined angle θbis preferably 2° or more. In the milling process, an acceleration voltage of the ion beams during the irradiation of the ion beams is preferably 400 to 1400 V.

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Communication from Korean Patent Office regarding counterpart application.

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