Method of forming inductor in semiconductor device

Details Method of forming inductor in semiconductor device Method of forming inductor in semiconductor device

2007-07-30

2008-11-18

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S700000, C257SE21022, C257SE21579

Reexamination Certificate

active

07452806

ABSTRACT:
Disclosed herein is a method of forming an inductor in a semiconductor device, the method including forming an etching-prevention film, a first interlayer insulating film, and a first hard mask film over a silicon semiconductor substrate in this sequence; selectively etching the first hard mask film to form a hole; forming a second interlayer insulating film over the first hard mask film; forming a second hard mask film over the second interlayer insulating film; forming a photoresist pattern having a trench forming opening over the second hard mask film; removing a part of the second hard mask film and a part of the second interlayer insulating film by using the photoresist pattern as an etching mask, to form a first trench in the second interlayer insulating film; removing the photoresist pattern and polymers produced in the first trench by ashing and cleaning process; etching the second interlayer insulating film by using the second hard mask film as an etching mask until the first hard mask film is exposed to form a second trench in the second interlayer insulating film, and subsequently, etching the first interlayer insulating film by using both the first hard mask film and the second hard mask film as etching masks until the etching-prevention film is exposed, to form a hole in the first interlayer insulating film; and removing polymers produced in the second trench and the second hole by ashing and cleaning processes.

REFERENCES:
patent: 7153766 (2006-12-01), Zhang et al.

Affiliated with

Also associated with

Rating

Method of forming inductor in semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming inductor in semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming inductor in semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4023627