Method of forming improved thick plated copper interconnect and

Details Method of forming improved thick plated copper interconnect and Method of forming improved thick plated copper interconnect and

1997-12-17

2000-02-15

Hiteshew, Felisa

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438722, H01L 21302

Patent

active

060252758

ABSTRACT:
A thick plated interconnect (80) may be fabricated by forming a metal layer (20) above a semiconductor layer (12). A dielectric layer (22) may be formed on the metal layer (20). A via (24) may be formed in the dielectric layer (22) to expose the metal layer (20). A copper lead (50) may be formed electrically coupled to the metal layer (20) through the via (24) of the dielectric layer (22). A barrier member (88) may be formed on the copper lead (50). A bondable member (86) comprising aluminum may be formed on the barrier member (88).

REFERENCES:
patent: 5238874 (1993-08-01), Yamada
patent: 5316974 (1994-05-01), Crank
patent: 5527739 (1996-06-01), Parrillo et al.
patent: 5674787 (1997-10-01), Zhao et al.

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